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Office of Vice President

  1. “集魚燈具裝置”，ROC patent (發明第1325757號)、專利期限:2010/06/11-2027/11/04
  2. “一種適用於GPS / WLAN之雙頻濾波器”，ROC patent (發明第M382600)、專利期限:2010/06/11-2019/10/07
  3. “超寬頻雙工器”，ROC patent (發明第1325653號)、專利期限:2010/06/01-2026/07/06
  4. “A WIDEBAND FILTER WITH INTERDIGITAL STEPPED IMPEDANCE RESONATORS”－ROC patent (Invention No. I318824)公開日期：2009/12/21、專利期限：2009/12/21-2026/07/06
  5. “AN ULTRA WIDE BAND (UWB) FILTER WITH ENHANCED COUPLING”－ROC patent (Invention No. I307576) 專利期限:2009/03/11~2026/01/26
  6. “PHOTODETECTOR AND METHOD FOR MANUFACTURING THE SAME”－ROC patent (Invention No.I281267) 申請日期:2005/04/07、公開日期:2007/05/11、專利期限: 2007/05/11 - 2025/04/06
  7. “THE PROCESS OF WHITE-LIGHT LED BY ZINC SULFUR DOPED DYSPROSIUM THIN FILM”－ROC patent(Invention No. I297552)專利期限:2008/06/01~2025/11/23
  8. “A SOLAR CELL STRUCTURE WITH LOW TEMPERATURE POLYSILICON THIN FILMS”－ROC patent (Invention No. M330563) 專利期限:2008/04/11~2017/01/01
  9. “A SOLAR-CELL WITH EMBEDDED MICROCRYSTALLINE SILICON THIN FILMS”－ROC patent(Invention No. M327085) 專利期限：2008/02/11 - 2016/11/28
  10. “A PLANAR FILTER WITH THE DEFECTED GROUND STRUCTURE”－ROC patent(Invention No. M312785)申請日期：2006/11/20、公開日期：2007/05/21
  11. “EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME”－Germany patent (2009核准)
  12. “METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE” －Germany paten (Inventaion No.10 2007 021 983) 申請日期:2006/06/26、公開日期:2009/04/09
  13. “EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME”－US patent (Invention No. US 7452755 B2)- 2008
  14. “METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE” －US patent (Invention No. 7,387,915 B2)- 2008
  15. 095-039BP/“METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE”－Japen patent (2006申請中)
  16. “EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME”－ROC patent (Invention No. I297537)專利期限:2009/03/21~2026/6/25
  17. “METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE” －ROC patent (Invention No. I 307915)專利期限:2009/03/21~2026/6/25
  18. “EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME” – Korea patent (Invention No. 10-0781917號)申請日期:2006/10/24、公開日期:2007/11/28、專利期限:2006/10/24-2026/10/24
  19. “A DIPLEXER USING STEPPED IMPEDANCE RESONATORS”－ROC patent (Invention No. M324306)專利期限：2007/12/21 - 2016/11/19
  20. “A THIN FILM SOLAR-CELL WITH MULTI LEVEL MICROCRYSTALLINE SILICON”－ROC patent (Invention No. M323112)專利期限：2007/12/01 - 2016/12/27
  21. “A WIDEBAND FILTER WITH COPLANAR WAVEGUIDE TYPE”－ROC patent (Invention No. I284998)申請日期: 2006/01/27、公開日期: 2007/08/01
  22. “A DIELECTRIC FILTER WITH AN ELLIPTIC FUNCTION RESPONSE”－ROC patent (M301415)申請日期：2006/05/08、公開日期：2006/11/21、專利期限：2006/11/21 - 2016/05/07
  23. “A STRUCTURE OF NONVOLATILE MEMORY WITH NANO METALLIC PARTICLES FOR STORAGE NODES”－ROC patent (Invention No. M312769)申請日期：2006/08/14、公開日期：2007/05/21 專利期限：2007/05/21 - 2016/08/13
  24. “METHOD FOR MANUFACTURING HEAT SINK OF SEMICONDUCTOR DEVICE” –China patent (2006申請中)
  25. “EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME” –China patent (Invention No.488331)－Sep 30, 2006
  26. “A HAIRPIN LINE WIDEBAND FILTER WITH STEPPED IMPEDANCE RESONATORS”－ROC patent (Invention No. M311185)申請日期:2006/08/14、公開日期:2007/05/01專利期限：2007/05/01 - 2016/08/13
  27. “A HAIRPIN-LINE WIDEBAND FILTER WITH THE SPURIOUS RESPONSE SUPPRESSION”－ROC patent (Invention No. M311129)申請日期:2006/08/14、公開日期:2007/05/01專利期限：2007/05/01 - 2016/08/13
  28. “A HAIRPIN-LINE ULTRA WIDE BAND DIPLEXER”－ROC patent (Invention No. M311130)申請日期2006/08/31，公開日期2007/05/01
  29. “A CPW-FED WIDEBAND POLYANGLE-SHAPED ANTENNA”－ROC patent (Invention No.M321152)申請日期: 2007/02/27、公開日期: 2007/10/21
  30. “複數枝路之寬頻天線”－ROC patent (申請中)
  31. “微帶線饋入之橢圓形超寬頻天線”－ROC patent (申請中)
  32. “超寬頻雙工器”－ROC patent (Invention No.95124788)申請日期2006/08/31，公開日期2007/05/01
  33. “A PLANAR FILTER WITH THE DEFECTED GROUND STRUCTURE”－ROC patent (Invention No.M 304165) –Nov 21, 2006申請日期:2006/05/15、公開日期:2007/01/01專利期限：2007/01/01 - 2016/05/14
  34. “A PROCESSING METHOD OF LOW TEMPERATURE POLY SILICON INDUCED BY NANO-METALLIC PARTICLES”－ROC patent (Invention No. I 267123) –Nov 21, 2006公開日期: 2006/11/21 專利期限：2006/11/21 - 2025/08/21
  35. “A WIDE STOPBAND FILTER WITH EMBEDDED ELEMENTS”－ROC patent (Invention No.M 300375) –Nov 1, 2006申請日期:2006/05/08、專利期限：2006/11/01 - 2016/05/07
  36. “AN ULTRA WIDE BAND (UWB) FILTER WITH WIDE STOPBAND AND HIGH ATTENUATION RATE”－ROC patent (Invention No. M 300376)申請日期:2006/05/08、公開日期:Nov 1, 2006
  37. “AN ULTRA WIDE BAND (UWB) FILTER WITH SUPPRESSING THE SPURIOUS RESPONSE”－ROC patent (Invention No. M 300377) 申請日期:2006/05/15、公開日期:Nov 1, 2006、專利期限：2006/11/01 - 2016/05/14
  38. “PROCESSING METHOD OF LOW TEMPERATURE POLY SILICON”－ROC patent (Invention No. M 263341) –Oct. 10, 2006申請日期:2005/08/23、 專利日期: 2006/10/01 - 2025/08/22
  39. “AN ULTRA WIDE BAND (UWB) FILTER WITH INTERDIGITAL COUPLED LINES”－ROC patent (Invention No.M 295345) –Aug 1, 2006申請日期:2006/02/03、專利期限: 2006/08/01 - 2016/02/02
  40. “AN ULTRA WIDE BAND (UWB) FILTER WITH FAST STOPBAND ATTENUATION”－ROC patent (Invention No.M 295346) –Aug 1, 2006申請日期:2006/02/03、專利期限:2006/11/01 - 2016/05/07
  41. “發光二極體之製造方法”－ROC patent (Invention No. I268003)－2006申請日期: 2005/12/20、公開日期:2006/12/01、專利期限: 2006/12/01 - 2025/12/19
  42. “Lateral current blocking light emitting diode and method of making the same”－US patent (Invention No. 6781147)－2003
  43. “Fabrication method for GaN MOSFETs”－ROC patent (Invention No. 169680)－ 2003
  44. “Structure of GaN MSM UV photodetector and its fabrication method”－ROC patent (Invention No. 169681)－2002
  45. “A modified suceptor structure for epitaxial wafers”－ROC patent (Invention No. 186781)－2002
  46. “A modified water cooled gas nozzle”－ROC patent(Invention No. 180792)－2002
  47. “Ohmic contact structure of II-VI semiconductor and its fabrication process”－US patent (Invention No. 6469319B1)－2002
  48. “A modified suceptor structure for epitaxial wafers”－ROC patent (Invention No. 186781) –Jan 21, 2002
  49. “II-VI Semiconductor Ohmic Contact and Manufacturing Technology”－US patent (Invention No. 6469319)－2001
  50. “A modified water cooled gas nozzle”－ROC patent (Invention No. 180792) –Sep 1, 2001
  51. “Structure of GaN MSM UV photodetector and its fabrication method”－ROC patent (Invention No. 169681)－December 21, 2002
  52. “橫向電流阻障發光二極體及其製造方法"－ROC patent (Invention No. 122756)－November 12, 2002公告日期: 2004/10/21專利期限: 2004/10/21 - 2022/11/11
  53. “Fabrication method for GaN MOSFETs”－ROC patent (Invention No. 169680)－公告日期：2002/12/21
  54. “II-VI Semiconductor Ohmic Contact and Manufacturing Technology”-ROC patent (Invention No. 132585) May 16, 2001
  55. “低雜訊遠紅外線汞鎘碲(HgCdTe)光偵測器及其製造方法”－ROC patent (Invention No.120926) –September 21, 2000
  56. “多峰共振穿透二極體大信號模擬電路”－ROC patent (Invention No. 160174), 2000
  57. “Low Noise Infrared HgCdTe Photo-detectors and Manufacturing Technology”－ ROC patent (Invention No.120926) September 21, 2000
  58. “Two-Mode InGaSb/GaSb Strained-Layer Superlattice Infrared Photodetector"　－U.S. patent (No. 6037604)－March 14, 2000
  59. “A Multi-Peak Resonant Tunneling Diode – Based Electronic Circuit and Large Signal Multi-Peak RTD SPICE Model”, ROC patent (Invention No. 394453) June 11, 2000
  60. “InAs-GaSb Superlattice Structure Infrared Detectors Fabricated by Organic Vapor Phase Epitaxy" – U.S. patent (No. 6005259) – Dec. 21, 1999
  61. “Red Semiconductor Laser of Low Beam Divergence” – U.S. patent (No. 5923659) – July 13, 1999
  62. “High Efficiency InGaP NIP Solar Cell” – U.S. patent (No. 5911839) – June 15, 1999
  63. “The InAs/GaSb Superlattice Infrared Detector by MOCVD System” –ROC patent (Invention No. 104113) – May 21, 1999
  64. “Low Divergence Beam Angle of Red Semiconductor Laser” – ROC patent (Invention No. 101681) – Feb. 11, 1999
  65. “高效率磷化鎵銦NIP太陽電池”－ROC patent (Invention No. 130666)－Nov. 21, 1997
  66. “Double Frequency GaInSb Strained Layer Superlattice” – ROC patent (Invention No. 67602) – July 5, 1995
  67. “以有機金屬氣相磊晶法製作砷化銦/銻化鎵超晶格紅外線檢測器之製法”-ROC patent (Invention No.00358876) 申請日期: 1997/02/17、公開日期:1999/05/21、專利期限: 1999/05/21 - 2017/02/16
  68. “雙頻銻化銦鎵應力層超晶格選頻器”-ROC patent (Invention No.00229334)－Sep. 1, 1994申請日期: 1994/04/01、公開日期:1994/09/01、專利期限:1994/09/01 - 2014/03/31
  69. “A Multi – Peak Resonant Tunneling Diode - Based Electronic Circuit and Large Signal Multi – Peak Resonant Tunneling Diode SPICE Model” – U.S. patent (No. 5,535,146) – Apr. 27, 1995

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